Enabling EUV Lithography with Metal Oxide Resists Webinar

SEMI Chemicals and Gases Manufacturers Group (CGMG) and Center for Sustainable Materials Chemistry (CSMC) will host a webcast on Wednesday, May 13, at 10:00am (U.S. Pacific) time. 

Webcast is free for SEMI members / students and $25 for non-members.
Broadcast in Gilbert 324
Title:  Enabling EUV Lithography with Metal Oxide Resists

Abstract: With each successive process generation, the semiconductor industry delivers higher performance devices at lower cost, which in turn has enabled the phenomenal advances in electronics throughout our daily lives. Lithography advances have been central to this trend by packing transistors more tightly thereby reducing cost per transistor and increasing performance. To produce smaller transistors, succeeding generations of photolithography machines have printed ever smaller features by decreasing the wavelength of the light source.  Photolithography has gone from ultraviolet at 365 nm to deep ultraviolet at 248 and 193 nm.  Extreme ultraviolet, EUV, is widely anticipated to be the next step with a wavelength at 13.5 nm.

Tremendous progress has been made during recent years in moving EUV lithography (EUVL) towards commercialization with full-field scanners now operational at multiple device manufacturers, sustaining 40-WPH operation. Despite progress on the exposure tools, conventional chemically amplified polymer photoresists have been stretched to the limit and are now running out of gas. Because of their fundamental architecture, such photoresists are not expected to reach the resolution requirement with sufficiently low linewidth roughness. This limitation is further compounded by the low EUV absorbance of conventional photoresists – they cannot efficiently harness the sparse EUV photons, leading to poor photosensitivity and susceptibility to shot-noise induced patterned variability. A new paradigm is required.

Inpria is developing directly patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUVL. Our resists have previously demonstrated process stable imaging and EUV resolution below 10-nm half-pitch. Here, we present recent advances in our Generation 2 materials that offer improved photosensivity while maintaining image fidelity. Targeted formulation improvements have enabled N7 technology node patterning in an ultrathin resist that has greater than 30:1 etch selectivity into a typical carbon underlayer. In addition to lithographic performance, we review progress in parallel advances required to enable the transition from lab to fab for metal oxide photoresists. We bring these efforts together to demonstrate full-field exposures on ASML NXE scanners.

This new platform of metal-oxide photoresist will be considered in the context of how critical partnerships through the entire R&D ecosystem are vital for innovation in the material space.

See the agenda and register​ here